DocumentCode :
1027251
Title :
Second breakdown in MOS transistors
Author :
Asakawa, Tetsuya ; Tsubouchi, N.
Author_Institution :
Mitsubishi Electric Corp., Itami, Japan
Issue :
11
fYear :
1966
Firstpage :
811
Lastpage :
812
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1966.15846
Filename :
1474436
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1027251
