DocumentCode :
1027279
Title :
Influence of ion pairing on impurity profiles in double diffused silicon devices
Author :
Cohen, B.G.
Author_Institution :
Bell Telephone Laboratories, Inc.
Issue :
11
fYear :
1966
Firstpage :
816
Lastpage :
816
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1966.15849
Filename :
1474439
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1027279
