Title :
AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performance
Author :
Chang, M.F. ; Asbeck, P.M. ; Wang, K.C. ; Sullivan, G.J. ; Miller, Douglas L.
Author_Institution :
Rockwell International Corporation, Microelectronics Research & Development Center, Thousand Oaks, USA
Abstract :
Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2.0 ¿m is 45 GHz. NTL ring oscillators have operated at 16.5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing These are record speeds for bipolar circuits.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; gallium arsenide; 11 GHz; 16.5 ps; 2 micron; 45 GHz; AlGaAs-GaAs heterojunction bipolar transistor circuits; CML ring oscillators; NTL ring oscillators; cutoff frequency; emitter width; extrinsic base-collector capacitance; frequency dividers; high-speed performance; proton implantation; self-aligned base contact process; wafer-probe testing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860803
