DocumentCode
1027383
Title
GaAs MMIC broadband SPDT PIN switch
Author
Thomas, L. ; Hing, A. ; Hughes, E. ; Beckerson, J. ; Wilson, Keith
Author_Institution
GEC Research Limited, Hirst Research Centre, Wembley, UK
Volume
22
Issue
22
fYear
1986
Firstpage
1183
Lastpage
1185
Abstract
The first GaAs MMIC using PIN diodes as the active elements is described. The single-pole double-throw (SPDT) switch covers the frequency range 2 to 18 GHz, and can handle incident powers of 1W at X-band. Isolation and insertion loss vary respectively from ¿ 55 dB and 1 dB at 2 GHz to ¿17 dB and 2.2 dB at 18 GHz.
Keywords
III-V semiconductors; gallium arsenide; microwave integrated circuits; monolithic integrated circuits; switching circuits; -17 to 2.2 dB; -55 to 1 dB; 1 W; 2 to 18 GHz; GaAs; III-V semiconductors; MMIC; PIN switch; SHF; SPDT; X-band; broadband; monolithic microwave IC; p-i-n diodes; single-pole double-throw;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860811
Filename
4257028
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