Title :
GaAs MMIC broadband SPDT PIN switch
Author :
Thomas, L. ; Hing, A. ; Hughes, E. ; Beckerson, J. ; Wilson, Keith
Author_Institution :
GEC Research Limited, Hirst Research Centre, Wembley, UK
Abstract :
The first GaAs MMIC using PIN diodes as the active elements is described. The single-pole double-throw (SPDT) switch covers the frequency range 2 to 18 GHz, and can handle incident powers of 1W at X-band. Isolation and insertion loss vary respectively from ¿ 55 dB and 1 dB at 2 GHz to ¿17 dB and 2.2 dB at 18 GHz.
Keywords :
III-V semiconductors; gallium arsenide; microwave integrated circuits; monolithic integrated circuits; switching circuits; -17 to 2.2 dB; -55 to 1 dB; 1 W; 2 to 18 GHz; GaAs; III-V semiconductors; MMIC; PIN switch; SHF; SPDT; X-band; broadband; monolithic microwave IC; p-i-n diodes; single-pole double-throw;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860811
