Soft error rates in 64 K and 256 K DRAMs

Comparison of alpha-particle-induced soft error rates for 64K and 256 K DRAM devices from several manufacturers have indicated characteristic changes as the circuit density increases. In 64K devices bit-line-dependent errors form a more significant fraction of the total error rate. In contrast, 256 K devices exhibit greater cell sensitivity. Bit-line sensitivity increases by one order of magnitude and cell sensitivity by approximately two orders of magnitude between 64K and 256 K devices.