Title :
Implanted planar GaInAsP/InP hetero-bipolar transistor
Author_Institution :
Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
Abstract :
Planar GaInAsP/InP hetero-bipolar transistors (HBTs) applicable for integration into optoelectronic integrated circuits (OEICs) have been fabricated. Si and Mg ions have been implanted into an LPE-grown heterostructure on semi-insulating InP to form collector and base contacts. Emitter-up HBTs showed maximum current gains of up to 20000.
Keywords :
III-V semiconductors; bipolar integrated circuits; bipolar transistors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; liquid phase epitaxial growth; optical communication equipment; phototransistors; GaInAsP-InP; III-V semiconductors; InP semiinsulating substrate; LPE-grown heterostructure; dopants; epitaxial growth; hetero-bipolar transistor; monolithic IC; optical communication equipment; optoelectronic integrated circuits; phototransistors; planar implanted devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860816
