DocumentCode
1027431
Title
Implanted planar GaInAsP/InP hetero-bipolar transistor
Author
Kr¿¿utle, H.
Author_Institution
Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
Volume
22
Issue
22
fYear
1986
Firstpage
1191
Lastpage
1193
Abstract
Planar GaInAsP/InP hetero-bipolar transistors (HBTs) applicable for integration into optoelectronic integrated circuits (OEICs) have been fabricated. Si and Mg ions have been implanted into an LPE-grown heterostructure on semi-insulating InP to form collector and base contacts. Emitter-up HBTs showed maximum current gains of up to 20000.
Keywords
III-V semiconductors; bipolar integrated circuits; bipolar transistors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; liquid phase epitaxial growth; optical communication equipment; phototransistors; GaInAsP-InP; III-V semiconductors; InP semiinsulating substrate; LPE-grown heterostructure; dopants; epitaxial growth; hetero-bipolar transistor; monolithic IC; optical communication equipment; optoelectronic integrated circuits; phototransistors; planar implanted devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860816
Filename
4257033
Link To Document