RTN VT Instability From the Stationary Trap-Filling Condition: An Analytical Spectroscopic Investigation

This paper presents an analytical investigation of the spatial and energetic position of the traps responsible for threshold voltage random telegraph fluctuations in a metal-oxide-semiconductor device. Assuming a stationary trap-filling condition as a result of the application of a constant gate bias, a simple formula is obtained to identify the oxide region where traps having an arbitrary probability to change their state between two subsequent time instants are located. Results are extremely important for the statistical spectroscopic analysis of random telegraph noise sources.