Title :
Strained Quantum Well InAs Micro-Hall Sensors: Dependence of Device Performance on Channel Thickness
Author :
Dobbert, Julia ; Kunets, Vasyl P. ; Morgan, Timothy Al ; Guzun, Dorel ; Mazur, Yuriy I. ; Masselink, William Ted ; Salamo, Gregory J.
Author_Institution :
Humboldt-Univ. zu Berlin, Berlin
Abstract :
Magnetic sensitivity and low-frequency noise in micro-Hall sensors based on pseudomorphic InAs quantum well channels are investigated as functions of InAs thickness. The strained InAs quantum wells with thickness between 0 and 20 Aring are added into lattice-matched doped channel In0.53Ga0.47As/In0.47Al0.48As/InP heterostructures and enhance the absolute magnetic sensitivity by increasing the electron mobility. We show that the increase of the InAs channel thickness also leads to a significant reduction of the low-frequency noise. The result is an improved magnetic field detection over a broad frequency range. A minimum magnetic field detection limit of nT is resolved by a 40-m wide doped channel micro-Hall device at frequencies around kHz.
Keywords :
Hall effect devices; III-V semiconductors; electron mobility; gallium arsenide; indium compounds; magnetic sensors; microsensors; quantum well devices; InGaAs-InAlAs-InP; channel thickness; electron mobility; flicker noise; low-frequency noise; magnetic field detection; magnetic flux density 42 nT; magnetic sensitivity; pseudomorphic quantum well channels; quantum well microhall sensors; semiconductor films; semiconductor materials; size 0 angstrom to 20 angstrom; size 40 mum; Electron mobility; Frequency; Gallium arsenide; Indium phosphide; Low-frequency noise; Magnetic fields; Magnetic materials; Magnetic sensors; Nanobioscience; Physics; Flicker noise; Hall effect devices; In$_{0.53}$Ga$_{0.47}$As; In$_{0.53}$ Ga$_{0.47}$ As; InAs; semiconductor films; semiconductor materials; sensitivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.913000
