• DocumentCode
    1027506
  • Title

    Mössbauer study of implanted garnet films after plasma exposure

  • Author

    Zhou, X.Z. ; Morrish, A.H. ; Betsui, K.

  • Author_Institution
    University of Manitoba, Winnipeg, Canada
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    2335
  • Lastpage
    2337
  • Abstract
    Single crystal garnet films of composition (YSmCaLu)3(FeGe)5O12were implanted with 175 keV Ne+ions with a dose of 2 × 1014Ne+/cm2and then exposed to an argon plasma. Conversion-electron Mössbauer spectroscopy (CEMS) showed that some changes occurred in the implanted layer. In particular, the average hyperfine fields were slightly increased and the hyperfine-fleld distributions were decreased. Also, ferrous ions on tetrahedral (d) sites produced during the implantation were converted back to ferric ions. In addition, the amount of a paramagnetic phase was reduced. The films were also annealed at temperatures up to 600°C and studied by CEMS. Some possible origins of the plasma-induced changes are suggested.
  • Keywords
    Garnet films/devices; Ion implantation; Magnetic bubble device fabrication; Mossbauer spectroscopy; Plasma applications, materials processing; Absorption; Annealing; Argon; Garnet films; Iron; Laboratories; Magnetic field measurement; Magnetization; Paramagnetic materials; Plasma temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1065318
  • Filename
    1065318