Title :
High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm
Author :
Moseley, A.J. ; Scott, M.D. ; Moore, Alastair H. ; Wallis, R.H.
Author_Institution :
Plessey Research (Caswell) Ltd., Towcester, UK
Abstract :
Photodiodes with a long-wavelength cutoff extending out to 2.4 μm have been fabricated from MOCVD-grown Ga0.28-In0.72As/Al0.28In0.72As heterostructures, using a compositionally graded buffer layer to accommodate the lattice mismatch between the active layer and the InP substrate. These devices exhibit peak efficiency as high as 95% at 1.8-2.2μm with dark currents as low as 35 nA at -0.5 V reverse bias.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; optical communication equipment; photodiodes; vapour phase epitaxial growth; 1.8 to 2.4 micron; GaInAs-AlInAs-InP; III-V semiconductors; IR detectors; InP; MOCVD; VPE; compositionally graded buffer layer; heterojunction photodiodes; infrared-region; lattice mismatch; long-wavelength cutoff; optical communication equipment; semiconductor growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860826
