Title :
Transients in high-power modulators
Author :
Schneider, S. ; Taylor, Graham W.
Author_Institution :
U. S. Army Electronics Command, Fort Monmouth, N. J.
Abstract :
The physical size involved in the design and construction of high-power modulators introduces high inductance and stray capacitance in the circuit. Analysis shows that under normal operation any inductance between the energy source and the RF device, together with stray capacitance, produces damped oscillations after the "turn-on" and "turn-off" of the RF generator beam. Unfortunately, the need for adequate protection of the RF generator and modulator requires the introduction of an additional inductor in the circuit to limit the rate of rise of fault current. Improper placement of this inductor can also produce detrimental oscillations under fault conditions. Proper design can minimize these unwanted transients. An analysis of the circuit and the results obtained in a high-power modulator are discussed.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1966.15878