DocumentCode

1027619

Title

Noise and ionization rate measurements in silicon photodiodes

Author

Baertsch, R.D.

Author_Institution

GE Research and Development Center, Schenectady, N. Y.

Issue

12

fYear

1966

Firstpage

987

Lastpage

987

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1966.15880

Filename

1474470