DocumentCode :
1027619
Title :
Noise and ionization rate measurements in silicon photodiodes
Author :
Baertsch, R.D.
Author_Institution :
GE Research and Development Center, Schenectady, N. Y.
Issue :
12
fYear :
1966
Firstpage :
987
Lastpage :
987
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1966.15880
Filename :
1474470
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1027619
