Title :
Injection-locking of a wide-stripe AlGaAs/GaAs GRIN-SCH SQW laser
Author :
Leopold, M.M. ; Podgornik, R.G. ; Williams, R.A.
Author_Institution :
McDonnell Douglas Astronautics Company, Electro-optics Technology Group, St. Louis, USA
Abstract :
A GRIN-SCH SQW laser with a 60 ¿m-wide stripe emitting 24mW per facet has been injection-locked with greater than 20dB suppression of the free-running axial modes of the cavity. The frequency of the injected signal was separated from the edge of the envelope of the free-running frequencies by 10 Å.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; laser mode locking; semiconductor junction lasers; AlGaAs-GaAs; GRIN-SCH SQW laser; axial mode suppression; injected signal frequency; injection locking; semiconductor laser; wide-stripe;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860839
