• DocumentCode
    1027690
  • Title

    Ion implantation as a production technique

  • Author

    Burrill, J.T. ; King, W.J. ; Harrison, S. ; McNally, P.

  • Author_Institution
    Ion Physics Corporation, Burlington, Mass.
  • Volume
    14
  • Issue
    1
  • fYear
    1967
  • fDate
    1/1/1967 12:00:00 AM
  • Firstpage
    10
  • Lastpage
    17
  • Abstract
    This paper discusses the development of ion implantation techniques for the production of high efficiency n-on-p silicon solar cells. Although the process is still being optimized, ion-implanted cells are already competitive with diffusion produced cells, with air mass zero (AMO) efficiencies of 11 percent having been achieved. A high-current production machine capable of producing 10 000 cells/week has been constructed and is being applied to further cell development. The process has been applied to dendritic material with AMO efficiencies of > 9.3 percent having been achieved. Using an ion beam high-vacuum sputtering process, cells have been fabricated with 1 mil fused SiO2integral cover slips and AMO efficiencies of > 10 percent.
  • Keywords
    Aerospace materials; Fabrication; Ion beams; Ion implantation; Photovoltaic cells; Physics; Production; Silicon; Sputtering; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.15887
  • Filename
    1474610