DocumentCode
1027726
Title
Temperature dependence of resonant frequency in optically excited diaphragms
Author
Thornton, K.E.B. ; Uttamchandani, Deepak ; Culshaw, Brian
Author_Institution
University of Strathclyde, Department of Electronic & Electrical Engineering, Glasgow, UK
Volume
22
Issue
23
fYear
1986
Firstpage
1232
Lastpage
1234
Abstract
Silicon diaphragms of 4 ¿m thickness, fabricated by anisotropic etching techniques, are coated with a thin layer of aluminium. An intensity-modulated laser beam focused on the diaphragm generates transverse vibrations which are detected interferometrically. The measured deflections, resonant frequencies and temperature dependence of resonant frequencies are reported.
Keywords
aluminium; elemental semiconductors; laser beam effects; light interferometry; piezoelectric oscillations; piezoelectric transducers; pressure transducers; radiation pressure; silicon; Si-Al diaphragm; anisotropic etching; deflections; intensity-modulated laser beam; interferometric detection; optically excited diaphragms; piezoelectric sensor; resonant frequency; temperature dependence; transverse vibrations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860845
Filename
4257064
Link To Document