• DocumentCode
    1027726
  • Title

    Temperature dependence of resonant frequency in optically excited diaphragms

  • Author

    Thornton, K.E.B. ; Uttamchandani, Deepak ; Culshaw, Brian

  • Author_Institution
    University of Strathclyde, Department of Electronic & Electrical Engineering, Glasgow, UK
  • Volume
    22
  • Issue
    23
  • fYear
    1986
  • Firstpage
    1232
  • Lastpage
    1234
  • Abstract
    Silicon diaphragms of 4 ¿m thickness, fabricated by anisotropic etching techniques, are coated with a thin layer of aluminium. An intensity-modulated laser beam focused on the diaphragm generates transverse vibrations which are detected interferometrically. The measured deflections, resonant frequencies and temperature dependence of resonant frequencies are reported.
  • Keywords
    aluminium; elemental semiconductors; laser beam effects; light interferometry; piezoelectric oscillations; piezoelectric transducers; pressure transducers; radiation pressure; silicon; Si-Al diaphragm; anisotropic etching; deflections; intensity-modulated laser beam; interferometric detection; optically excited diaphragms; piezoelectric sensor; resonant frequency; temperature dependence; transverse vibrations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860845
  • Filename
    4257064