A novel planar diode mixer for submillimeter-wave applications

Author

Newman, Tom ; Bishop, William L. ; Ng, Kwong T. ; Weinreb, Sander

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

39

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1964

Lastpage

1971

Abstract

A mixer employing a planar GaAs Schottky diode has been designed and tested over a 300-365 GHz bandwidth. Using a planar diode eliminates the disadvantages of mechanical instability and labor-intensive assembly associated with conventional whisker-contacted diodes. The mixer design process uses scale model impedance measurements for both the design of individual components and the measurement of impedances presented to the diode terminals by the mixer mount at fundamental and harmonic frequencies. Results from these impedance measurements are used in linear and nonlinear numerical mixer analyses to predict the mixer performance

Keywords

III-V semiconductors; Schottky-barrier diodes; gallium arsenide; mixers (circuits); solid-state microwave circuits; submillimetre wave devices; 300 to 365 GHz; 65 GHz; GaAs; Schottky diode; THz region; planar diode mixer; scale model impedance measurements; submillimeter-wave applications; Anodes; Bonding; Epitaxial layers; Frequency; Gallium arsenide; Impedance measurement; Performance analysis; Schottky diodes; Temperature; Testing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.106534

Filename

106534