• DocumentCode
    1027775
  • Title

    Quantum-well-doped FET (QUD-FET)

  • Author

    Hikosaka, K. ; Sasa, S. ; Hirachi, Yasutake

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    22
  • Issue
    23
  • fYear
    1986
  • Firstpage
    1240
  • Lastpage
    1241
  • Abstract
    A novel FET using a 2DEG is presented. The FET has an AlAs/GaAs/AlAs single quantum well with planar doping in the centre of the GaAs layer. The conduction channels are composed of a 2DEG generated in undoped GaAs layers outside the well. The measured 2DEG concentration was 1.8¿2 × 1012cm¿2 with electron mobilities of 3500cm2/Vs at RT and 10500cm2/Vs at 77K. A 1.5¿m-gate-length FET exhibits a maximum transconductance of 174 mS/mm and a maximum current exceeding 300 mA/mm at 77K.
  • Keywords
    Schottky gate field effect transistors; high electron mobility transistors; 1.5 micron; 174 mS; 2DEG FET; 2DEG concentration; 300 mA; AlAs-GaAs-AlAs single quantum well; conduction channels; electron mobilities; planar doping; quantum well doped FET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860850
  • Filename
    4257069
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1027775