Title :
Quantum-well-doped FET (QUD-FET)
Author :
Hikosaka, K. ; Sasa, S. ; Hirachi, Yasutake
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
A novel FET using a 2DEG is presented. The FET has an AlAs/GaAs/AlAs single quantum well with planar doping in the centre of the GaAs layer. The conduction channels are composed of a 2DEG generated in undoped GaAs layers outside the well. The measured 2DEG concentration was 1.8¿2 × 1012cm¿2 with electron mobilities of 3500cm2/Vs at RT and 10500cm2/Vs at 77K. A 1.5¿m-gate-length FET exhibits a maximum transconductance of 174 mS/mm and a maximum current exceeding 300 mA/mm at 77K.
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; 1.5 micron; 174 mS; 2DEG FET; 2DEG concentration; 300 mA; AlAs-GaAs-AlAs single quantum well; conduction channels; electron mobilities; planar doping; quantum well doped FET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860850
