• DocumentCode
    1027778
  • Title

    Electron drift velocity in avalanching silicon diodes

  • Author

    Duh, C.Y. ; Moll, J.L.

  • Author_Institution
    Stanford University, Stanford, Calif.
  • Volume
    14
  • Issue
    1
  • fYear
    1967
  • fDate
    1/1/1967 12:00:00 AM
  • Firstpage
    46
  • Lastpage
    49
  • Abstract
    The differential resistance of an avalanching p+nn+junction is used to obtain the electron drift velocity at electric fields where significant avalanching is occurring (2 × 105< E < 4 × 105V/cm). The velocity is also obtained as a function of temperature and is consistent with energetic phonon scattering.
  • Keywords
    Artificial intelligence; Charge carrier processes; Diodes; Electric resistance; Electron mobility; Equations; Ionization; Silicon; Space charge; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.15895
  • Filename
    1474618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1027778