DocumentCode
1027788
Title
GaAs/AlGaAs directional coupler switch with submillimetre device length
Author
Takeuchi, H. ; Nagata, Kazuyuki ; Kawaguchi, Hitoshi ; Oe, Katsutoshi
Author_Institution
NTT Electrical Communications Laboratories, Atsugi, Japan
Volume
22
Issue
23
fYear
1986
Firstpage
1241
Lastpage
1243
Abstract
A GaAs/AlGaAs directional coupler switch, for the first time with a device length shorter than 1 mm, has been fabricated by utilising the good controllability of molecular beam epitaxy and reactive ion beam etching. The switching voltage is as low as 5V. The extinction ratio is 17dB for a crossover state and 14dB for a straight-through state.
Keywords
III-V semiconductors; aluminium compounds; directional couplers; electro-optical devices; gallium arsenide; molecular beam epitaxial growth; optical communication equipment; optical couplers; sputter etching; switches; 5 V; GaAs-AlGaAs; III-V semiconductors; MBE; RIE; directional coupler switch; electro-optical devices; molecular beam epitaxy; optical communication equipment; optical waveguide components; reactive ion beam etching; submillimetre device length;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860851
Filename
4257070
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