• DocumentCode
    1027808
  • Title

    Characteristics of separated-gate JFETs

  • Author

    Nanver, Lis K. ; Goudena, E.J.G.

  • Author_Institution
    Delft University of Technology, Department of Electrical Engineering, Delft, Netherlands
  • Volume
    22
  • Issue
    23
  • fYear
    1986
  • Firstpage
    1244
  • Lastpage
    1246
  • Abstract
    In the subthreshold region of JFETs a reach-through diode is formed between the top and bottom gates. This has consequences for the application of separated-gate JFETs.
  • Keywords
    junction gate field effect transistors; semiconductor device models; model; reach-through diode; separated-gate JFETs; subthreshold region; transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860853
  • Filename
    4257072
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1027808