Title :
Characteristics of separated-gate JFETs
Author :
Nanver, Lis K. ; Goudena, E.J.G.
Author_Institution :
Delft University of Technology, Department of Electrical Engineering, Delft, Netherlands
Abstract :
In the subthreshold region of JFETs a reach-through diode is formed between the top and bottom gates. This has consequences for the application of separated-gate JFETs.
Keywords :
junction gate field effect transistors; semiconductor device models; model; reach-through diode; separated-gate JFETs; subthreshold region; transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860853
