Analysis of double-gate thin-film transistor

An analysis is made of a double-gate thin-film transistor structure, and equations are derived for current flow for different input conditions on each gate. The use of two independent gates allows the possibility of simultaneously maintaining depletion and enhancement regions along the channel, and Poisson\´s equation is used to find the field and potential distribution along the channel. It is shown that by proper manipulation of the second gate, characteristic curves ranging from the normal TFT "pentode" curves to "triode" curves can be obtained from the same device. A comparison is given of experimental and theoretical results.