Title :
A W-band monolithic downconverter
Author :
Chang, Kwo Wei ; Wang, Huei ; Bui, Stacey B. ; Chen, Tzu-hung ; Tan, Kin L. ; Ton, Thuy-Nhung ; Berenz, J. ; Dow, Gee Samuel ; Lin, T. Shyan ; Garske, Diane C. ; Liu, Louis C T
Author_Institution :
TRW/ESG, Div. of Electron. & Technol., Redondo Beach, CA, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The monolithic downconverter consists of a two-stage low-noise amplifier and a single-balanced mixer. The single-balanced mixer has been designed using the HEMT gate Schottky diodes inherent to the process. Measured results of the complete downconverter show conversion gain of 5.5 dB and a double-sideband noise figure of 6.7 dB at 94 GHz. Also presented is the downconverter performance characterized over the -35°C to +65°C temperature range. The downconverter design was a first pass success and has a high circuit yield
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; gallium arsenide; high electron mobility transistors; indium compounds; mixers (circuits); -35 to 65 degC; 5.5 dB; 6.7 dB; 94 GHz; EHF; HEMT gate Schottky diodes; InGaAs; MM-wave type; W-band; conversion gain; double-sideband noise figure; low-noise amplifier; millimetre wave operation; monolithic downconverter; pseudomorphic HEMT technology; single-balanced mixer; two-stage LNA; Fabrication; Gain measurement; HEMTs; Indium gallium arsenide; Integrated circuit measurements; Low-noise amplifiers; Noise figure; Noise measurement; PHEMTs; Schottky diodes;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
