• DocumentCode
    1027878
  • Title

    Circuit aspects of transistor parametric frequency doublers

  • Author

    Anderson, A.P.

  • Author_Institution
    178 Grove Lane, Cheadle Hume, Cheshire, England
  • Volume
    14
  • Issue
    2
  • fYear
    1967
  • fDate
    2/1/1967 12:00:00 AM
  • Firstpage
    86
  • Lastpage
    89
  • Abstract
    Factors determining the performance of a transistor parametric frequency doubler are considered from the transistor equivalent network viewpoint, emphasising the integral nature of the active and parametric regions. On the basis of a simple transistor model connected as a frequency doubler, it is shown that a higher loading of the harmonic circuit is required than for a conventional varactor multiplier. By use of circuit models which incorporate parasitics inherent in a high-power, high-frequency planar transistor structure, it is shown that more efficient pumping of the varactor region is possible than would be predicted from the standard equivalent circuit models.
  • Keywords
    Capacitance; Circuits; Frequency conversion; Impedance; Microwave transistors; Physics; Power harmonic filters; Predictive models; Silicon; Varactors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.15904
  • Filename
    1474627