Title :
Laser-MESFET optoelectronic integration on GaAs: a simple technological process
Author :
Brillouet, F. ; Clei, A. ; Kampfer, A. ; Biblemont, S. ; Azoulay, Rina ; Duhamel, N.
Author_Institution :
Centre National d´Etudes des Télécommunications, Laboratoire de Bagneux, Laboratoire associé au CNRS (UA 250), Bagneux, France
Abstract :
A new simple technological process of laser-MESFET integration is described. In this process only a one-step MOCVD epitaxy schedule is used for the laser layer growth, and an implanted channel is employed for the MESFET. Integrated modules with a threshold current of 22 mA and an optical/ electrical conversion factor ¿P/¿VG=9mW/V/facet are obtained.
Keywords :
Schottky gate field effect transistors; field effect integrated circuits; integrated optoelectronics; optical communication equipment; semiconductor junction lasers; vapour phase epitaxial growth; 22 mA; GaAs; MOCVD epitaxy schedule; VPE; implanted channel; integrated optoelectronics; laser layer growth; laser-MESFET integration; optical communication equipment; optoelectronic integration; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860862
