DocumentCode
1027909
Title
Laser-MESFET optoelectronic integration on GaAs: a simple technological process
Author
Brillouet, F. ; Clei, A. ; Kampfer, A. ; Biblemont, S. ; Azoulay, Rina ; Duhamel, N.
Author_Institution
Centre National d´Etudes des Télécommunications, Laboratoire de Bagneux, Laboratoire associé au CNRS (UA 250), Bagneux, France
Volume
22
Issue
23
fYear
1986
Firstpage
1258
Lastpage
1260
Abstract
A new simple technological process of laser-MESFET integration is described. In this process only a one-step MOCVD epitaxy schedule is used for the laser layer growth, and an implanted channel is employed for the MESFET. Integrated modules with a threshold current of 22 mA and an optical/ electrical conversion factor ¿P/¿VG=9mW/V/facet are obtained.
Keywords
Schottky gate field effect transistors; field effect integrated circuits; integrated optoelectronics; optical communication equipment; semiconductor junction lasers; vapour phase epitaxial growth; 22 mA; GaAs; MOCVD epitaxy schedule; VPE; implanted channel; integrated optoelectronics; laser layer growth; laser-MESFET integration; optical communication equipment; optoelectronic integration; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860862
Filename
4257081
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