Accurate calculation of depletion-layer profile in a periodic metal-semiconductor array

Poisson´s equation is solved for two-dimensional calculation of the depletion-layer profile in a periodic array of metal-semiconductor contacts. Using Green´s functions, which verify the specific boundary conditions of the structure´s unit cell, an integral equation is obtained and the moment method is used for its numerical solution. At last empirical relations are deduced for the determination of characteristic points of the depleted region.