Title :
Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser
Author :
Hirayama, Hiroshi ; Matsunaga, Kaori ; Asada, Minoru ; Suematsu, Yasuharu
Author_Institution :
Tokyo Inst. of Technol., Japan
fDate :
1/20/1994 12:00:00 AM
Abstract :
The lasing action of a Ga0.67In0.33As/GaInAsP/InP quantum-box (QB) laser with single-layer tensile-strained (TS)-QB active region is demonstrated for the first time. The fabricated QB is 30 nm in diameter and 12 nm thick with a period of 70 nm. The sample was fabricated by using two-step MOVPE growth, electron-beam-exposure (EBX) direct writing, and wet-chemical etching processes. The threshold current density was 7.6 KA/cm2 at 77 K with pulse current injection.
Keywords :
III-V semiconductors; current density; etching; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; semiconductor quantum dots; vapour phase epitaxial growth; 12 nm; 30 nm; 70 nm; 77 K; Ga0.67In0.33As-GaInAsP-InP; Ga0.67In0.33As/GaInAsP/InP; electron-beam-exposure direct writing; lasing action; pulse current injection; quantum-box laser; single-layer active region; tensile-strained region; threshold current density; two-step MOVPE growth; wet-chemical etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940082
