• DocumentCode
    1027951
  • Title

    621 nm CW operation (0%C) of AlGaInP visible semiconductor lasers

  • Author

    Kawata, S. ; Kobayashi, K. ; Gomyo, A. ; Hino, I. ; Suzuki, T.

  • Author_Institution
    NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
  • Volume
    22
  • Issue
    23
  • fYear
    1986
  • Firstpage
    1265
  • Lastpage
    1266
  • Abstract
    Continuous-wave (CW) operation (0°C at 621 nm has been achieved for the first time by an AlGaInP mesa stripe laser, grown by metalorganic vapour-phase epitaxy. The lasing wavelength is shorter than the He-Ne gas laser´s wavelength, 633 nm. The CW threshold current is 60 mA (4.8 kA/cm2).
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; vapour phase epitaxial growth; 0 degC; 60 mA; 621 nm; AlGaInP mesa stripe laser; CW operation; III-V semiconductors; MOVPE; continuous wave operation; lasing wavelength; metalorganic vapour-phase epitaxy; threshold current; visible semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860866
  • Filename
    4257085
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1027951