Title :
621 nm CW operation (0%C) of AlGaInP visible semiconductor lasers
Author :
Kawata, S. ; Kobayashi, K. ; Gomyo, A. ; Hino, I. ; Suzuki, T.
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Continuous-wave (CW) operation (0°C at 621 nm has been achieved for the first time by an AlGaInP mesa stripe laser, grown by metalorganic vapour-phase epitaxy. The lasing wavelength is shorter than the He-Ne gas laser´s wavelength, 633 nm. The CW threshold current is 60 mA (4.8 kA/cm2).
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; vapour phase epitaxial growth; 0 degC; 60 mA; 621 nm; AlGaInP mesa stripe laser; CW operation; III-V semiconductors; MOVPE; continuous wave operation; lasing wavelength; metalorganic vapour-phase epitaxy; threshold current; visible semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860866
