Title :
Very high speed operation of planar InGaAs/InP photodiode detectors
Author :
Temkin, H. ; Frahm, R.E. ; Olsson, N.A. ; Burrus, C.A. ; McCoy, R.J.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
Planar, diffused, InGaAs/InP PIN detectors have been optimised for high-speed operation. To minimise the junction capacitance the p-n junction diameter was reduced to 25 ¿n, resulting in operating chip capacitance as low as 20 fF. The relationship between the bandwidth and quantum efficiency was investigated by varying the thickness of the n-InGaAs absorbing layer, from 8¿m down to 0.4 ¿m. Using optical heterodyning techniques, a response bandwidth ( ¿3dB) in excess of 20 GHz was demonstrated. The quantum efficiency of the fastest devices is 38% at 1.3 ¿m wavelength.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; 1.3 micron; 20 GHz; 20 fF; 38 percent; III-V semiconductor; InGaAs-InP; PIN detectors; high speed operation; n-type absorbing layer; operating chip capacitance; optical communication equipment; optical heterodyning techniques; photodetectors; photodiode detectors; planar p-i-n devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860868
