The frequency response of a PIN avalanching photodiode has been analyzed without the usual assumption that the electrons and the holes have equal ionization rates (

) and equal scattering-limited velocities (

). A general formula for the frequency response is first derived for the case in which the photons are absorbed in the space charge region or

region and the photon density decreases with penetration depth according to

. The frequency response for the case of photon absorption in the

or

region is obtained simply by letting α approach infinity in the general formula and that for the case of uniform absorption of photons in the space charge region by allowing α to approach zero. The analysis, based on a model in which the photons come from the

side, shows the following: 1) The dc multiplication factor does not depend on v
nand v
pin any manner. It does not depend on α if

. When

, the dc multiplication factor increases with increasing α according to
![M_{A}(0)/M_{B}(0) = [1 - \\exp (-\\alpha w - \\alpha _{n}w +\\alpha _{p}w)]/[1 + (\\alpha _{n} - \\alpha _{p})/ \\alpha ] \\cdot [1 - \\exp (-\\alpha w)],](/images/tex/15809.gif)
where

and

are the dc multiplication factors for finite and infinite α, respectively, and

is the space charge region width.

is given by

when

and by
![[\\exp (-\\alpha _{n}w)-\\alpha _{p}/ \\alpha -{n}]^{-1}](/images/tex/15813.gif)
when

. 2) The cutoff frequency f
codoes not in any case depend on α but depends on α
nand α
pand on an "effective scattering-limited velocity" v
e, defined as

. For

, the cutoff frequency is given by
![f_{co}\\simeq 3v_{e}/[\\pi wM_{B}(0)]\\simeq 3\\alpha_{n}v_{e}/[\\pi M_{B}(0)]](/images/tex/15816.gif)
. For

is greatly improved and is given by
![f_{co- }\\simeq \\alpha _{n}v_{e}/[2\\piw \\alpha _{p}M_{B}(0)]](/images/tex/15818.gif)
.