DocumentCode :
1027989
Title :
Frequency response of PIN avalanching photodiodes
Author :
Chang, Joseph Juifu
Author_Institution :
IBM Components Division, Hopewell Junction, N.Y.
Volume :
14
Issue :
3
fYear :
1967
fDate :
3/1/1967 12:00:00 AM
Firstpage :
139
Lastpage :
145
Abstract :
The frequency response of a PIN avalanching photodiode has been analyzed without the usual assumption that the electrons and the holes have equal ionization rates ( \\alpha _{n} = \\alpha _{p} ) and equal scattering-limited velocities ( v_{n} = v_{p} ). A general formula for the frequency response is first derived for the case in which the photons are absorbed in the space charge region or i region and the photon density decreases with penetration depth according to e^{-\\alpha x} . The frequency response for the case of photon absorption in the p or n region is obtained simply by letting α approach infinity in the general formula and that for the case of uniform absorption of photons in the space charge region by allowing α to approach zero. The analysis, based on a model in which the photons come from the p side, shows the following: 1) The dc multiplication factor does not depend on vnand vpin any manner. It does not depend on α if \\alpha _{n} = \\alpha _{p} . When \\alpha _{n} > \\alpha _{p} , the dc multiplication factor increases with increasing α according to M_{A}(0)/M_{B}(0) = [1 - \\exp (-\\alpha w - \\alpha _{n}w +\\alpha _{p}w)]/[1 + (\\alpha _{n} - \\alpha _{p})/ \\alpha ] \\cdot [1 - \\exp (-\\alpha w)], where M_{A}(0) and M_{B}(0) are the dc multiplication factors for finite and infinite α, respectively, and w is the space charge region width. M_{B}(0) is given by (1- \\alpha _{n}w)^{-1} when \\alpha _{n} = \\alpha _{p} and by [\\exp (-\\alpha _{n}w)-\\alpha _{p}/ \\alpha -{n}]^{-1} when \\alpha _{n} \\gg \\alpha _{p} . 2) The cutoff frequency fcodoes not in any case depend on α but depends on αnand αpand on an "effective scattering-limited velocity" ve, defined as v_{n}v_{p}/(v_{n}+v_{p}) . For \\alpha _{n} = \\alpha _{p} , the cutoff frequency is given by f_{co}\\simeq 3v_{e}/[\\pi wM_{B}(0)]\\simeq 3\\alpha_{n}v_{e}/[\\pi M_{B}(0)] . For \\alpha _{n} \\gg \\alpha _{p}, f_{co} is greatly improved and is given by f_{co- }\\simeq \\alpha _{n}v_{e}/[2\\piw \\alpha _{p}M_{B}(0)] .
Keywords :
Absorption; Charge carrier processes; Cutoff frequency; Electromagnetic scattering; Frequency response; H infinity control; Ionization; Particle scattering; Photodiodes; Space charge;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.15914
Filename :
1474637
Link To Document :
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