DocumentCode :
1028101
Title :
64 Mb bubble memory chip architecture
Author :
Toyooka, T. ; Sato, T. ; Takeshita, M. ; Kodama, N. ; Suzuki, R.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
23
Issue :
5
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
2572
Lastpage :
2574
Abstract :
A 64 Mb bubble memory chip architecture using 1.4 μm × 1.6 μm cell size ion-implanted tracks and the dual gate with block replicate and swap functions is described. The memory chip is composed of sixteen 4Mb blocks, which have 1160 minor loops with the bit storage of 4097. The one major line-minor loops organization and even-odd structure are used to compose the minor loops and a major line without using bad tracks. A chip carrier with matrix diodes is connected with the memory chip by CCB bonding method to reduce the pin number of the memory module. A new pulse drive method with the matrix connection is proposed to drive 16 blocks in parallel with small number of drive circuits.
Keywords :
Magnetic bubble memories; Bonding; Character generation; Conductors; Diodes; Laboratories; Memory architecture; Niobium; Production; Pulse circuits; Tracking loops;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1065371
Filename :
1065371
Link To Document :
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