• DocumentCode
    1028117
  • Title

    Characteristics for 4Mb ion-implanted bubble memory modules

  • Author

    Kato, Y.

  • Author_Institution
    Microelectronics Research Labs., NEC Corporation, Kawasaki, Japan
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    2566
  • Lastpage
    2568
  • Abstract
    A 4Mb module with a 4Mb on-chip-cache ion-implanted bubble memory chip has been developed. Operation temperature characteristics for the module are evaluated for total operation with fully loaded data. A temperature coefficient for the bias field in the module is adjusted to that for the chip by using a pair of rare earth magnets with large and small temperature coefficients. The acceptable high temperature limit for the module operation is obtained by restricting the number of consecutive minor-minor gate operation to 8 pages. Consequently, reasonable total operation margins are confirmed in a temperature range from -10 to 60°C without any modification for operation conditions.
  • Keywords
    Magnetic bubble memories; Magnetic thermal factors; Anisotropic magnetoresistance; Chip scale packaging; Conductors; Degradation; Detectors; Magnets; Positron emission tomography; Power dissipation; Saturation magnetization; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1065372
  • Filename
    1065372