DocumentCode
1028117
Title
Characteristics for 4Mb ion-implanted bubble memory modules
Author
Kato, Y.
Author_Institution
Microelectronics Research Labs., NEC Corporation, Kawasaki, Japan
Volume
23
Issue
5
fYear
1987
fDate
9/1/1987 12:00:00 AM
Firstpage
2566
Lastpage
2568
Abstract
A 4Mb module with a 4Mb on-chip-cache ion-implanted bubble memory chip has been developed. Operation temperature characteristics for the module are evaluated for total operation with fully loaded data. A temperature coefficient for the bias field in the module is adjusted to that for the chip by using a pair of rare earth magnets with large and small temperature coefficients. The acceptable high temperature limit for the module operation is obtained by restricting the number of consecutive minor-minor gate operation to 8 pages. Consequently, reasonable total operation margins are confirmed in a temperature range from -10 to 60°C without any modification for operation conditions.
Keywords
Magnetic bubble memories; Magnetic thermal factors; Anisotropic magnetoresistance; Chip scale packaging; Conductors; Degradation; Detectors; Magnets; Positron emission tomography; Power dissipation; Saturation magnetization; Temperature;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1987.1065372
Filename
1065372
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