• DocumentCode
    1028161
  • Title

    Formation of TiN and TiSi2 by rapid processing using a large-area electron beam

  • Author

    Du Yuan-Cheng ; Wang Hai ; Jiang Guo-Bao ; Sun Die-Chi ; Yu Zeng-Qui ; Li Fu-Ming

  • Author_Institution
    Fudan University, Department of Electronic Engineering, Shanghai, China
  • Volume
    22
  • Issue
    24
  • fYear
    1986
  • Firstpage
    1293
  • Lastpage
    1294
  • Abstract
    Rapid nitridation processing of Ti evaporated on Si wafer using a large-area electron beam is described. RBS, SIMS and sheet resistance analyses indicated that TiN and TiSi2 film were formed simultaneously in 20 s, and may be applied as a diffusion barrier for IC fabrications.
  • Keywords
    electron beam applications; integrated circuit technology; metallisation; titanium compounds; RBS; SIMS; Si wafer; TiN formation; TiSi2 formation; VLSI; diffusion barrier for IC fabrication; large-area electron beam; rapid nitridation processing; rapid processing; sheet resistance analyses; silicides;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860887
  • Filename
    4257107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028161