DocumentCode :
1028164
Title :
Perpendicular magnetic anisotropy of reactively sputtered cobalt nitride thin films
Author :
Matsuoka, Morito ; Ono, Ken´ichi ; Inukai, Takashi
Author_Institution :
NTT Electrical Communication Laboratories, Ibaraki, Japan
Volume :
23
Issue :
5
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
2788
Lastpage :
2790
Abstract :
This paper discusses the perpendicular magnetic anisotropy of reactively sputtered cobalt nitride thin films. The perpendicular anisotropy is induced in an almost single γ phase film, and does not depend on its crystallite orientation. The films with the anisotropy exhibit a clear columnar structure. The structure changes to a granular one as temperature increases above 300°C. This change is caused by the nitrogen dissociation from the films. Finally, the actual measurements on recording characteristics are performed on CoNx films, and high density perpendicular recording is realized.
Keywords :
Perpendicular magnetic anisotropy; Anisotropic magnetoresistance; Cobalt; Crystallization; Density measurement; Magnetic films; Nitrogen; Performance evaluation; Perpendicular magnetic anisotropy; Sputtering; Temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1065376
Filename :
1065376
Link To Document :
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