Title :
Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier
Author :
Ohmuro, Kazuhiko ; Fujishiro, Hiroki Inomata ; Itoh, Masaaki ; Nakamura, Hiroshi ; Nishi, Seiji
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
12/1/1991 12:00:00 AM
Abstract :
Characteristics of the pseudomorphic inverted HEMT (P-I-HEMT) are compared with those of the pseudomorphic HEMT. Both devices were fabricated in enhancement mode by the same process. P-I-HEMT shows a higher maximum transconductance of 590 mS/mm, and higher K-value of 600 mS/Vmm at a threshold voltage of O V, and better pinch-off characteristics than its counterpart. Noise characteristics of P-I-HEMT are reported. Lower noise figure (1.0 dB at 18 GHz) was obtained in the P-I-HEMT. It is concluded that the P-I-HEMT shows far better noise characteristics than the other at low drain voltage and current
Keywords :
S-parameters; electron device noise; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; solid-state microwave devices; 1 dB; 18 GHz; 590 mS; DC characteristics; enhancement mode; low noise amplifier; noise characteristics; pinch-off characteristics; pinchoff characteristics; pseudomorphic inverted HEMT; transconductance; Artificial intelligence; Carrier confinement; FETs; Fabrication; HEMTs; Low-noise amplifiers; PHEMTs; Resists; Semiconductor device noise; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
