DocumentCode :
1028211
Title :
Double heterojunction bipolar transistors using AlGaInP/GaAs/GaInP
Author :
Yow, H.K. ; Lee, Tae-Woo ; Houston, P.A. ; Lee, H.Y. ; Button, C.C. ; Roberts, Jeffrey S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Volume :
30
Issue :
2
fYear :
1994
fDate :
1/20/1994 12:00:00 AM
Firstpage :
167
Lastpage :
169
Abstract :
The first Al0.18Ga0.34In0.48P/GaAs/Ga0.52In0.43P double heterojunction bipolar transistors grown by metal organic vapour phase epitaxy are reported. They exhibit a current gain of 110 at high collector-emitter voltage and a small offset voltage of 30 mV. The addition of Al to the emitter has not adversely affected the quality of the emitter-base interface.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 30 mV; AlGaInP-GaAs-GaInP; AlGaInP/GaAs/GaInP structure; III-V semiconductors; collector-emitter voltage; current gain; double heterojunction bipolar transistors; emitter-base interface; metal organic vapour phase epitaxy; offset voltage;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940092
Filename :
265322
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1028211
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