DocumentCode :
1028234
Title :
Parametric effects in a microwave Read avalanche diode
Author :
Fukatsu, Yoshiharu
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume :
14
Issue :
5
fYear :
1967
fDate :
5/1/1967 12:00:00 AM
Firstpage :
251
Lastpage :
259
Abstract :
The parametric effects in the microwave Read avalanche diode are studied using a simplified one-dimensional model. The signals of frequencies ω1 and ω2 interact with each via the pumping wave of frequency 
, through the nonlinearity in avalanche. This paper shows the range in which the microwave Read avalanche diode has the parametric negative resistance, some typical values of the impedance matrix elements of the microwave Read avalanche diode, and shows that the small-signal impedance locus of the microwave Read avalanche diode on Smith chart coincides approximately with Kita\´s experimental results.
, through the nonlinearity in avalanche. This paper shows the range in which the microwave Read avalanche diode has the parametric negative resistance, some typical values of the impedance matrix elements of the microwave Read avalanche diode, and shows that the small-signal impedance locus of the microwave Read avalanche diode on Smith chart coincides approximately with Kita\´s experimental results.Keywords :
Charge carrier processes; Electron devices; Frequency; Germanium; Impedance; Microwave devices; Photodiodes; Semiconductor diodes; Silicon; Solid state circuits;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.15938
Filename :
1474661
Link To Document :
