Structure and magnetic properties of RF reactively sputtered Iron nitride thin films

The structure and magnetic properties of iron nitride thin films deposited by rf reactive sputtering under various sputtering conditions have been investigated. The amount of nitrogen partial pressure plays a dominant role in determining the composition of the films which is responsible for its magnetic properties. Either single phase or mixed phase compounds can be obtained through the control of the nitrogen partial pressure. The application of negative substrate bias affects the microstructure of the films which accounts for the variation of the coercivity. These films cover a wide range of magnetic characteristics (Hc from 2.5 to 360 Oe with equivalent Ms from 1610 to 185 emu/c.c.) which can be applied to high density magnetic recording materials.