Title :
Improvement In AlGaAs/GaAs HBT power gains with buried proton-implanted layer
Author :
Nakajima, O. ; Nagata, Kazuyuki ; Yamauchi, Yuji ; Ito, H. ; Ishibashi, Takayuki
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
A new structure for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) that employs a buried proton-implanted external collector layer is proposed. This structure has been successfully used to achieve high-performance HBTs with maximum oscillation frequencies fmax up to 51 GHz for a device with 2 ¿×5 ¿m emitter and 4 ¿m×7 ¿m collector dimensions.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; ion implantation; 51 GHz; AlGaAs-GaAs; buried proton-implanted layer; heterojunction bipolar transistors; oscillation frequencies; power gains;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860903
