Title :
Low-temperature CW operation of GaInAsP/InP surface-emitting laser with circular buried heterostructure
Author :
Watanabe, Issei ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
Abstract :
The first CW operation of a GaInAsP surface-emitting laser has been demonstrated at 77 K. The active region was made to form a 15 ¿m-diameter circular mesa shape and was buried with p¿n current-confining layers. The minimum CW threshold current was 19 mA at 77 K, and single-longitudinal-mode oscillation has been achieved.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; 19 mA; 77 K; CW threshold current; GaInAsP-InP; active region; circular buried heterostructure; circular mesa shape; low temperature CW operation; p- n current-confining layers; semiconductor laser; single-longitudinal-mode oscillation; surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860911
