DocumentCode :
1028402
Title :
8 Gbit/s return-to-zero modulation of a semiconductor laser by gain-switching
Author :
Tucker, Rodney ; Wiesenfeld, J.M. ; Gnauck, A.H. ; Bowers, John E.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Volume :
22
Issue :
25
fYear :
1986
Firstpage :
1329
Lastpage :
1331
Abstract :
We demonstrate 8 Gbit/s return-to-zero pulse modulation of an InGaAsP constricted mesa laser, using short pulses generated by gain-switching. Pattern effects are minimised by precise control of the bias current.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; 8 Gbit/s; InGaAsP constricted mesa laser; bias current; gain-switching; return-to-zero pulse modulation; semiconductor laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860914
Filename :
4257136
Link To Document :
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