DocumentCode
1028430
Title
Circuit contributions to alpha-particle sensitivity in DRAMs
Author
Carter, P.M. ; Wilkins, B.R.
Author_Institution
University of Southampton, Department of Electronics & Computer Science, Southampton, UK
Volume
22
Issue
25
fYear
1986
Firstpage
1334
Lastpage
1335
Abstract
Different manufacturers´ 64 K DRAM products have been studied to determine which circuit elements contribute towards the overall alpha-particle-induced soft error rate. This has shown that alpha hits on the bit lines are far and away the most important contributors to soft errors: cell, sense amplifier and peripheral circuit hits have insignificant effects. The results also indicate why bit lines are so sensitive.
Keywords
alpha-particle effects; field effect integrated circuits; integrated circuit testing; integrated memory circuits; random-access storage; 64 kbit; DRAM; NMOS circuits; alpha-particle sensitivity; alpha-particle-induced soft error rate; bit lines; cell; circuit elements; peripheral circuit; sense amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860917
Filename
4257139
Link To Document