• DocumentCode
    1028459
  • Title

    Activation energy of Cd in In1-xGaxAsyP1-y on InP (for y = 0 to 1)

  • Author

    Wehmann, H.-H. ; Fiedler, Fine ; Schlachetzki, A.

  • Author_Institution
    Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
  • Volume
    22
  • Issue
    25
  • fYear
    1986
  • Firstpage
    1338
  • Lastpage
    1340
  • Abstract
    The activation energy EA of the commonly used acceptor Cd in InGaAsP is studied experimentally for the whole range of compositions, lattice-matched to InP, with dependence on the doping concentration. Comparison with theory strongly suggests that EA is markedly influenced by the chemical shift.
  • Keywords
    III-V semiconductors; cadmium; gallium arsenide; gallium compounds; impurity electron states; indium compounds; semiconductor doping; III-V semiconductor; In1-xGaxAsyP1-y; InP; acceptor; activation energy; chemical shift; doping concentration;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860920
  • Filename
    4257142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028459