DocumentCode :
1028459
Title :
Activation energy of Cd in In1-xGaxAsyP1-y on InP (for y = 0 to 1)
Author :
Wehmann, H.-H. ; Fiedler, Fine ; Schlachetzki, A.
Author_Institution :
Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
Volume :
22
Issue :
25
fYear :
1986
Firstpage :
1338
Lastpage :
1340
Abstract :
The activation energy EA of the commonly used acceptor Cd in InGaAsP is studied experimentally for the whole range of compositions, lattice-matched to InP, with dependence on the doping concentration. Comparison with theory strongly suggests that EA is markedly influenced by the chemical shift.
Keywords :
III-V semiconductors; cadmium; gallium arsenide; gallium compounds; impurity electron states; indium compounds; semiconductor doping; III-V semiconductor; In1-xGaxAsyP1-y; InP; acceptor; activation energy; chemical shift; doping concentration;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860920
Filename :
4257142
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1028459
بازگشت