• DocumentCode
    1028513
  • Title

    Stability properties of indium doped TbFe amorphous films for magneto-optic memory applications

  • Author

    Iijima, Tetsuo ; Hatakeyama, Iwao

  • Author_Institution
    NTT Electrical Communication Laboratories, Ibaraki, Japan
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    2626
  • Lastpage
    2628
  • Abstract
    The stability of Indium doped TbFe amorphous films is investigated. These TbFeIn films show strong resistance to oxygen diffusion. The indium is considered to act on a thin surface layer of Tb and Fe oxides, making it a passive oxide layer. Gradual increase of saturation magnetization with aging can be explained by preferential Tb oxidation caused by oxygen diffusion increases near the film surface. An oxygen diffusion coefficient of 5 × 10-23m2/sec is obtained for the TbFeIn films after 2,000 hours aging at 70°C and 85 % R.H. This value is lower by at least a factor of hundred as compared to TbFe films.
  • Keywords
    Indium materials/devices; Magnetooptic memories; Aging; Amorphous materials; Corrosion; Indium; Magnetic field measurement; Magnetic properties; Optical films; Optical saturation; Oxidation; Stability;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1065409
  • Filename
    1065409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028513