Title :
Model for the switching voltage of miss devices based on an analogy with the thyristor
Author :
Choi, W.K. ; Owen, A.E. ; Delima, J.J. ; Gage, S.M.
Author_Institution :
University of Edinburgh, Department of Electrical Engingeering, Edinburgh, UK
Abstract :
A model for the switching voltage of MISS devices based on an analogy with the thyristor is presented. The weak dependence of the switching voltage on the doping of the intermediate semiconductor layer in the range of medium and heavy doping levels (¿1015cm¿3) can be quantitatively accounted for, and comparisons are made with published data from several sources.
Keywords :
metal-insulator-semiconductor devices; semiconductor device models; switching; MISS devices; heavy doping levels; intermediate semiconductor layer; model; switching voltage; thyristor analogy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870001
