• DocumentCode
    1028620
  • Title

    Model for the switching voltage of miss devices based on an analogy with the thyristor

  • Author

    Choi, W.K. ; Owen, A.E. ; Delima, J.J. ; Gage, S.M.

  • Author_Institution
    University of Edinburgh, Department of Electrical Engingeering, Edinburgh, UK
  • Volume
    23
  • Issue
    1
  • fYear
    1987
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A model for the switching voltage of MISS devices based on an analogy with the thyristor is presented. The weak dependence of the switching voltage on the doping of the intermediate semiconductor layer in the range of medium and heavy doping levels (¿1015cm¿3) can be quantitatively accounted for, and comparisons are made with published data from several sources.
  • Keywords
    metal-insulator-semiconductor devices; semiconductor device models; switching; MISS devices; heavy doping levels; intermediate semiconductor layer; model; switching voltage; thyristor analogy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870001
  • Filename
    4257169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028620