Magnetostriction of Fe-Al-Si alloy sputtered films

Author

Takahashi, M. ; Kato, N. ; Sato, T. ; Wakiyama, T.

Author_Institution

Tohoku University, Sendai, Japan

Volume

23

Issue

5

fYear

1987

fDate

9/1/1987 12:00:00 AM

Firstpage

3068

Lastpage

3070

Abstract

Magnetostriction measurements were made by the optical cantilever method for Fe-Al-Si (1∼6wt% Al, 5.5∼ 9.5wt% Si, bal. Fe) alloy films prepared by d.c. magnetron sputtering. The magnetostriction, λ, for the films with approx. 90wt% Fe concentration changes its value remarkably with annealing higher than 300°C. This annealing temperature at which sudden decrease of λ takes place corresponds well to the ordering temperature in the films. The line of λ=0 determined by the present experiment in Fe-Al-Si ternaly alloy films agrees fairly well with the λs=0 line obtained by calculation in the composition range with Fe content more than 87wt%. Two different film concentration regions, 5.7wt% Al-9.0wt% Si-bal.Fe and 4.2wt% Al-8.0wt% Si-bal. Fe, at which the soft magnetic properties ( $Hc\\simeq 0.4$ Oe, μeff >1000 at 5 MHz) are realized, were found to lie at about $\\lambda \\simeq 2\\times10^{-6}$ . The difference of concentration dependences of λ=0 for the films fabricated by vacuum evaporation and by sputtering are discussed.

Keywords

Magnetic films/devices; Magnetic recording/reading heads; Magnetic thermal factors; Magnetostriction; Annealing; Iron; Magnetic films; Magnetic properties; Magnetostriction; Optical films; Semiconductor films; Silicon alloys; Sputtering; Temperature;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.1987.1065420

Filename

1065420