Recombination centers in silicon transistor emitter-base junctions

Analysis of the temperature dependence of silicon transistor emitter-base junction forward characteristics has yielded information about the recombination centers that give rise to the "non-ideal" component of the base current. The recombination centers are either slightly above midgap with electron capture cross-section much larger than hole capture cross-section, or slightly below midgap with hole capture cross-section much larger than electron capture cross-section.