DocumentCode
1028657
Title
Growth temperature dependence of low-noise MESFET in molecular-beam epitaxy
Author
Chou, Y.C. ; Lee, C.T. ; Chen, C.D. ; Chu, Kevin C.
Author_Institution
Chung Shan Institute of Science & Technology, Lung-Tan, Republic of China
Volume
23
Issue
1
fYear
1987
Firstpage
7
Lastpage
8
Abstract
The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650°C between temperatures of 550°C and 700°C.
Keywords
III-V semiconductors; Schottky gate field effect transistors; carrier mobility; electron device noise; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; 550 to 700 degC; 8 GHz; GaAs; III-V semiconductors; MBE-growth material; electrical properties; epilayer quality; gain; low-noise MESFET; mobility; molecular-beam epitaxy; optimum noise figure; solid state microwave devices; substrate growth temperature dependence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870005
Filename
4257179
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