Title :
Growth temperature dependence of low-noise MESFET in molecular-beam epitaxy
Author :
Chou, Y.C. ; Lee, C.T. ; Chen, C.D. ; Chu, Kevin C.
Author_Institution :
Chung Shan Institute of Science & Technology, Lung-Tan, Republic of China
Abstract :
The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650°C between temperatures of 550°C and 700°C.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; carrier mobility; electron device noise; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; 550 to 700 degC; 8 GHz; GaAs; III-V semiconductors; MBE-growth material; electrical properties; epilayer quality; gain; low-noise MESFET; mobility; molecular-beam epitaxy; optimum noise figure; solid state microwave devices; substrate growth temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870005
