Very high-transconductance short-channel GaAs MESFETs with Ga0.3Al0.7As buffer layer

Author

Lee, Khuan Y. ; Al-Mudares, M. ; Beaumont, S.P. ; Wilkinson, C.D.W. ; Frost, Jan ; Stanley, C.R.

Author_Institution

University of Glasgow, Nanoelectronics Group Department of Electronics & Electrical Engineering, Glasgow, UK

Volume

23

Issue

1

fYear

1987

Firstpage

11

Lastpage

12

Abstract

MESFETs with 0.17Â¿m gate length were manufactured with an n+GaAs active layer (3 Ã— 1018cm-3) and an undoped Ga0.3Al0.7As buffer layer grown by molecular-beam epitaxy. The deives showed very high transconductance (700mS/mm) with good pinchoff characteristics. The experimental transconductance values were compared with calculated ones using a model that assumed total carrier confinement within the active layer by a barrier potential at the GaAs/GaAlAs interface. The results suggest that very high-transconductance short-gate-length MESFETs can be fabricated with a heavily doped GaAs active layer provided that the carrier density in the active layer is maintained at the doping level.

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; 0.17 micron; 700 mS/mm; GaAs-Ga0.3Al0.7As; III-V semiconductors; MBE; MESFETs; barrier potential; heavily doped active layer; molecular-beam epitaxy; n+-type active layer; pinchoff characteristics; short-gate-length; total carrier confinement; undoped buffer layer; very high transconductance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19870008

Filename

4257184