Title :
Doping uniformity and geometry of LSA oscillator diodes
Author :
Copeland, John A.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
fDate :
9/1/1967 12:00:00 AM
Abstract :
For maximum dc to RF power conversion efficiency, the dc and RF electric-field amplitudes must be properly related throughout the volume of a limited space-charge accumulation (LSA) diode. Space-charge due to a few percent fluctuation in the relative doping can distort the electric field enough to reduce the maximum attainable efficiency. Standing-wave effects with the diode limit the width in the direction of wave propagation to about 0.04 free-space wavelengths.
Keywords :
Charge carrier density; Diodes; Doping; Fluctuations; Gallium arsenide; Geometry; Oscillators; Power conversion; Radio frequency; Space charge;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.15993
