• DocumentCode
    1028800
  • Title

    Resonant tunnelling electron spectroscopy

  • Author

    Capasso, Federico ; Sen, Satyaki ; Cho, Andrew Y. ; Hutchinson, A.L.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    23
  • Issue
    1
  • fYear
    1987
  • Firstpage
    28
  • Lastpage
    29
  • Abstract
    The energy distribution of hot electrons quasiballistically injected in p+ GaAs has been probed directly using the tunnelling resonances of a double barrier in a specially designed two-terminal heterojunction device. The photocurrent/voltage characteristics give direct information on the hot electron spectrum, without requiring derivative techniques.
  • Keywords
    III-V semiconductors; aluminium compounds; electron spectroscopy; gallium arsenide; hot carriers; p-n heterojunctions; tunnelling; GaAs; GaAs-AlGaAs; III-V semiconductor; double barrier; energy distribution; hot electrons; p+ type; photocurrent/voltage characteristics; quasiballistic injection; two-terminal heterojunction device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870021
  • Filename
    4257211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028800